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PDF NP88N03KUG Data sheet ( Hoja de datos )

Número de pieza NP88N03KUG
Descripción N-CHANNEL POWER MOS FET
Fabricantes Renesas 
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N03KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP88N03KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP88N03KUG
TO-263 (MP-25ZK)
FEATURES
Channel temperature 175 degree rating
Super low on-state resistance
RDS(on) = 2.4 mMAX. (VGS = 10 V, ID = 44 A)
Low Ciss: Ciss = 9600 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
30
±20
±88
±352
1.8
200
175
55 to +175
59
348
Notes 1. PW 10 µs, Duty Cycle 1%
2. Tch 150°C, VDD = 15 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16854EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004

1 page




NP88N03KUG pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
0.5
0
-100
-50
0
VGS = 10 V
ID = 44 A
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
NP88N03KUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Co ss
Crss
10 100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
100
td(off)
tr
td(on)
10
VDD = 15 V
VGS = 10 V
RG = 0
1
0.1
1
tf
10 100
ID - Drain Current – A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
25
VDD = 24 V
20 15 V
10
V GS
8
VDD = 6 V
15 ID = 82 A
6
10 4
5
VDS
2
ID = 88 A
00
0 40 80 120 160 200
QG - Gate Charge - nC
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
Puls ed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
di/dt = 100 A/µs
VGS = 0 V
10
IF - Diode Forward Current - A
100
Data Sheet D16854EJ1V0DS
5

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