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PDF FDB8860_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDB8860_F085 | |
| Descripción | N-Channel Logic Level PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2010
FDB8860_F085
N-Channel Logic Level PowerTrench® MOSFET
30V, 80A, 2.6m:
Features
RDS(ON) = 1.9m: (Typ), VGS = 5V, ID = 80A
Qg(5) = 89nC (Typ), VGS = 5V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
12V Automotive Load Control
Start / Alternator Systems
Electronic Power Steering Systems
ABS
DC-DC Converters
©2010 Fairchild Semiconductor Corporation
FDB8860_F085 RevA
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
1000
10us
100
100us
10
CURRENT LIMITED
BY PACKAGE
1ms
1 OPERATION IN THIS
AREA MAY BE
SINGLE PULSE
LIMITED BY RDS(ON)
TJ = MAX RATED
TC = 25oC
0.1
1 10
10ms
100ms
DC
60
VDS, DRAIN TO SOURCE VOLTAGE(V)
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R z 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.1 1 10 100 1000 10000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
TJ = 175oC
80
TJ = 25oC
40
TJ = -55oC
0
1.0
1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
3.5
120
VGS = 4V
100 VGS = 3V
VGS = 5V
80 VGS = 10V
60
40
20
0
0.0
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
4.0
ID = 40A PULSE DURATION = 80Ps
DUTY CYCLE=0.5% MAX
3.5
3.0
TJ = 175oC
2.5
2.0 TJ = 25oC
1.5
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vsGate to Source Voltage
1.6
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( OC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8860_F085 Rev A
5 www.fairchildsemi.com
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