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PDF G23N60UFD Data sheet ( Hoja de datos )

Número de pieza G23N60UFD
Descripción SGF23N60UFD
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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SGF23N60UFD
Ultra-Fast IGBT
June 2001
IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
• High Input Impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
GC E
TTOO--33PPFF
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGF23N60UFD
600
± 20
23
12
92
12
92
75
30
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
1.6
3.0
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGF23N60UFD Rev. A

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G23N60UFD pdf
1000
Eoff
100
Eon
Eon
Eoff
10
4
Common Emitter
V = 300V, V =  15V
CC GE
R
G
=
23
T = 25
C
T = 125
C
8 12 16 20 24
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 25
12 TC = 25
9
300 V
6
200 V
VCC = 100 V
3
0
0 10 20 30 40
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
50
300
100 IC MAX. (Pulsed)
IC MAX. (Continuous)
10
50us
100us
1
DC Operation
1 Single Nonrepetitive
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
10
200
100
10
1
0.1
1
Safe Operating Area
V = 20V, T = 100
GE C
10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
©2001 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGF23N60UFD Rev. A

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