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PDF RJK4532DPH-E0 Data sheet ( Hoja de datos )
| Número de pieza | RJK4532DPH-E0 | |
| Descripción | High Speed Power Switching MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK4532DPH-E0
450V - 4A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C)
Low drive current
High speed switching
Outline
RENESAS Package code: PRSS0004ZJ-B
(Package name: TO-251)
4
G
12 3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAP Note3
EAR Note3
Pch Note 2
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Preliminary Datasheet
R07DS1038EJ0100
Rev.1.00
Mar 15, 2013
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
450
30
4
16
4
16
3
0.5
40.3
3.1
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
Page 1 of 6
1 page  
RJK4532DPH-E0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
2
Tc = 25°C
1 D=1
0.5
0.5
0.2
0.1
0.05
0.2
0.02
0.01
1 shot pulse
0.1
100 μ
1m
θch – c(t) = γ s (t) • θ ch – c
θch – c = 2.57°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
1
Pulse Width PW (s)
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 225 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK4532DPH-E0.PDF ] | |
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