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PDF NP82N04MDG Data sheet ( Hoja de datos )

Número de pieza NP82N04MDG
Descripción N-CHANNEL POWER MOS FET
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04MDG, NP82N04NDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N04MDG-S18-AY Note
NP82N04NDG-S18-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
FEATURES
Logic level
Super low on-state resistance
RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
High current rating
ID(DC) = ±82 A
Low input capacitance
Ciss = 6000 pF TYP.
Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±82
±328
143
1.8
175
55 to +175
43
185
V
V
A
A
W
W
°C
°C
A
mJ
(TO-220)
(TO-262)
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19800EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009

1 page




NP82N04MDG pdf
NP82N04MDG, NP82N04NDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 4.5 V
6
4
2
0
-75
10 V
ID = 41 A
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
tr
tf
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
10 V
4.5 V
VGS = 0 V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
40
VDD = 32 V
20 V
8V
30
20 VGS
10
8
6
4
10
0
0
VDS
20 40
ID = 82 A
2
0
60 80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D19800EJ1V0DS
5

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