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PDF DF2B7M3SC Data sheet ( Hoja de datos )

Número de pieza DF2B7M3SC
Descripción ESD Protection Diodes
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! DF2B7M3SC Hoja de datos, Descripción, Manual

ESD Protection Diodes Silicon Epitaxial Planar
DF2B7M3SC
DF2B7M3SC
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Pin 1
2: Pin 2
SC2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
VESD
±8
kV
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-08-03
Rev.1.0

1 page




DF2B7M3SC pdf
9. Clamp Voltage VC - Peak Pulse Current (IPP) (Note)
DF2B7M3SC
Fig. 9.1 VC - IPP
Fig. 9.2 Based on IEC61000-4-5 8/20 µs pulse.
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
10. Insertion Loss (S21) (Note)
Fig. 10.1 S21 - f
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2013-08-03
Rev.1.0

5 Page










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