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PDF FSJ260R4 Data sheet ( Hoja de datos )
| Número de pieza | FSJ260R4 | |
| Descripción | 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
FSJ163D, FSJ163R
June 1999
File Number 4751
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NO./BRAND
10K Commercial
FSJ163D1
10K TXV
FSJ163D3
100K
Commercial
FSJ163R1
100K
TXV
FSJ163R3
100K
Space
FSJ163R4
Formerly available as type TA45203.
Features
• 60A, 130V, rDS(ON) = 0.030Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 12.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
Package
S
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
FSJ163D, FSJ163R
Typical Performance Curves Unless Otherwise Specified (Continued)
1000
100
STARTING TJ = 150oC
STARTING TJ = 25oC
10
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
10
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
+
CURRENT
TRANSFORMER
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS ≤ 20V
50Ω
tP
0V
50Ω
DUT
+
VDD
-
50V-150V
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VGS = 12V
0V
VDD
RGS
RL
VDS
DUT
VDS
tON
tD(ON)
tR
90%
10%
VGS
10%
50%
PULSE WIDTH
tOFF
tD(OFF)
tF
90%
10%
90%
50%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4-5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FSJ260R4.PDF ] | |
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