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PDF ZXTP25040DZ Data sheet ( Hoja de datos )
| Número de pieza | ZXTP25040DZ | |
| Descripción | 40V PNP medium power transistor | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXTP25040DZ
40V PNP medium power transistor in SOT89
Summary
BVCEO > -40V
BVECO > -3V
IC(cont) = -3.5A
RCE(sat) = 55m⍀
VCE(sat) < -90mV @ 1A
PD = 2.4W
Complementary part number ZXTN25040DZ
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
• High power dissipation SOT89 package
• High peak current
• Low saturation voltage
• 3V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver
C
C
E
E
C
B
Ordering information
Device
ZXTP25040DZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
Pinout - top view
Device marking
• 1L6
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
1 page  
ZXTP25040DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(base open)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVECO
BVEBO
ICBO
Min.
-45
-40
-3
-7
Emitter cut-off current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Base-Emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
VBE(sat)
VBE(on)
hFE
fT
300
200
20
Input capacitance
Output capacitance
Turn-on time
Turn-off time
Cibo
Cobo
t(on)
t(off)
Typ.
-75
-65
Max.
Unit Conditions
V IC = -100μA
V IC= -10mA (*)
-8.7 V IE = -100μA
-8.2 V IE = -100μA
<-1
<-1
-170
-70
-215
-970
-50
-0.5
-50
-265
-90
-350
-1050
nA VCB = -45V
μA VCB = -45V, Tamb=100°C
nA VEB = -5.6V
mV IC = -1A, IB = -20mA(*)
mV IC = -1A, IB = -100mA(*)
mV IC = -3.5A, IB = -350mA(*)
mV IC = -3.5A, IB = -350mA(*)
-870 -950 mV IC = -3.5A, VCE = -2V(*)
450 900
300
50
IC = -10mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -3.5A, VCE = -2V(*)
270 MHz IC = -50mA, VCE = -10V
f = 100MHz
142
17.4
75.5
320
pF VEB = -0.5V, f = 1MHz(*)
pF VCB = -10V, f = 1MHz(*)
ns VCC= -15V, IC = -750mA,
ns IB1 = -IB2 = -15mA,
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXTP25040DZ.PDF ] | |
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