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PDF ZXTP25020DZ Data sheet ( Hoja de datos )
| Número de pieza | ZXTP25020DZ | |
| Descripción | 20V PNP high gain transistor | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXTP25020DZ
20V PNP high gain transistor in SOT89
Summary
BVCEO > -20V
BVECO > -4V
IC(cont) = 5A
VCE(sat) < -65mV @ -1A
RCE(sat) = 39m⍀
PD = 2.4W
Complementary part number ZXTN25020DZ
Description
Packaged in the SOT89 outline this new low saturation 20V PNP
transistor offers extremely low on state losses making it ideal for use
in DC-DC circuits and various driving and power management
functions
B
C
Features
• High peak current
• Low saturation voltage
• High gain
• SOT89 package
E
Applications
• DC-DC converters
• Load switch
• Motor drive
• Disconnect switch
• MOSFET and IGBT gate drive
E
CC
B
Pinout - top view
Ordering information
Device
ZXTP25020DZTA
Reel size
(inches)
7
Device marking
• 1L5
Tape width
(mm)
12
Quantity
per reel
1000
Issue 1- December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
1 page  
ZXTP25020DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BVCBO
voltage
Collector-Emitter
breakdown voltage
BVCEO
Emitter-Collector
breakdown voltage
(reverse blocking)
BVECX
Emitter-Collector
breakdown voltage
(reverse blocking)
BVECO
Emitter-Base breakdown BVEBO
voltage
Collector-Base cut-off
current
ICBO
Emitter cut-off current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
VBE(on)
hFE
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
Cibo
Cobo
td
tr
ts
tf
Min.
-25
-20
-4
-4
-7
300
200
45
Typ. Max.
-55
-45
-8.5
-8.5
-8.3
<1
<1
-50
-150
-185
-195
-1010
-50
-0.5
-50
-65
-215
-245
-265
-1100
-870 -1000
450 900
310
85
20
290
157 400
21 30
14.2
16.3
186
32.7
Unit Conditions
V IC = -100μA
V IC= -10mA (*)
V IE = -100μA, RBC < 1kΩ or
0.25V > VBC > -0.25V
V IE = -100μA
V IE = -5.6V
nA VCB = -25V
μA VCB = -25V, Tamb=100°C
nA VEB = -5.6V
mV IC = -1A, IB = -100mA(*)
mV IC = -1A, IB = -10mA(*)
mV IC = -2A, IB = -40mA(*)
mV IC = -5A, IB = -500mA(*)
mV IC = -5A, IB = -500mA(*)
mV IC = -5A, VCE = -2V(*)
MHz
pF
pF
ns
ns
ns
ns
IC = -10mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -5A, VCE = -2V(*)
IC = -10A, VCE = -2V(*)
IC = -50mA, VCE = -10V
f = 100MHz
VEB = -0.5V, f = 1MHz(*)
VCB = -10V, f = 1MHz(*)
VCC = -10V, IC = -1A,
IB1 = -IB2 = -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1- December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXTP25020DZ.PDF ] | |
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