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PDF IRF6645TRPBF Data sheet ( Hoja de datos )

Número de pieza IRF6645TRPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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IRF6645PbF
IRF6645TRPbF
l RoHS Compliant, Halogen-Free ‚
l Lead-Free (Qualified up to 260°C Reflow) 
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 28mΩ@ 10V
Qg tot
Qgd
Vgs(th)
14nC
4.8nC
4.0V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SJ
DirectFET™ ISOMETRIC
SH SJ SP
MZ MN
Description
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
100 V
±20
5.7
4.5 A
25
45
29 mJ
3.4 A
80 12
70
ID = 3.4A
10 ID= 3.4A
VDS= 80V
VDS= 50V
60 8
50
TJ = 125°C
6
40 4
30
TJ = 25°C
2
20
4
6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
16
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2012 International Rectifier
0
0 4 8 12 16
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 5.0mH, RG = 25Ω, IAS = 3.4A.
February 26, 2013

1 page




IRF6645TRPBF pdf
100.0
TJ = 150°C
TJ = 25°C
10.0 TJ = -40°C
IRF6645/TRPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1.0
VGS = 0V
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1.0
1msec
10msec
10.0
100.0 1000.0
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
6.0 6.0
5.5
5.0
5.0
4.0
4.5
3.0 4.0 ID = 1.0A
3.5 ID = 1.0mA
2.0 ID = 250μA
3.0 ID = 50μA
1.0
2.5
0.0
25 50 75 100 125 150
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
120
ID
100
TOP 1.5A
2.4A
BOTTOM 3.4A
80
60
40
20
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
5 www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
© 2012 International Rectifier
February 26, 2013

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