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PDF NP82N04PUG Data sheet ( Hoja de datos )
| Número de pieza | NP82N04PUG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04PUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP82N04PUG
TO-263 (MP-25ZP)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 6500 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±328
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C)
PT2
143
Channel Temperature
Tch 175
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg −55 to +175
IAR 43
EAR 185
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16858EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
0
-100
VGS = 10 V
ID = 41 A
-50 0 50 100 150 200
Tch - Channel Temperature - °C
NP82N04PUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
100
td(off)
tr
td(on)
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
10
ID - Drain Current - A
tf
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
10
9
VGS 8
7
8V 6
5
4
3
VDS
2
ID = 82 A 1
0
20 40 60 80 100 120
QG - Gate Charge - nC
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
Pulsed
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt =100 A/µs
VGS = 0 V
10
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D16858EJ1V0DS
5
5 Page | ||
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