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PDF FDMS86152 Data sheet ( Hoja de datos )

Número de pieza FDMS86152
Descripción N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS86152 Hoja de datos, Descripción, Manual

FDMS86152
N-Channel PowerTrench® MOSFET
100 V, 45 A, 6 mΩ
February 2013
Features
General Description
„ Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A
„ Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
Applications
„ Primary DC-DC MOSFET
„ Secondary Synchronous Rectifier
„ Load Switch
Pin 1
Top
Bottom
Pin 1
SSSG
DDDD
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
45
14
260
541
125
2.7
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.0
45
°C/W
Device Marking
FDMS86152
Device
FDMS86152
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
1
www.fairchildsemi.com

1 page




FDMS86152 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-4
SINGLE PULSE
RθJA = 115 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3 10-2 10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
100
1000
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
5
www.fairchildsemi.com

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