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PDF LDTD113ZLT1G Data sheet ( Hoja de datos )

Número de pieza LDTD113ZLT1G
Descripción Bias Resistor Transistor
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LDTD113ZLT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IC
PD
Tj
Tstg
Limits
50
5 to +10
500
200
150
55 to +150
Unit
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD113ZLT1G
E8
1
10 3000/Tape & Reel
LDTD113ZLT3G
E8
1
10 10000/Tape & Reel
LDTD113ZLT1G
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI(off)
0.3
VCC=5V, IO=100µA
V
VI(on)
1.5
VO=0.3V, IO=20mA
Output voltage
VO(on) 0.1 0.3 V IO/II=50mA/2.5mA
Input current
II − − 7.2 mA VI=5V
Output current
IO(off)
0.5 µA VCC=50V, VI=0V
DC current gain
GI 82 − − − VO=5V, IO=50mA
Input resistance
R1 0.7 1 1.3 k
Resistance ratio
R2/R1
8
10 12
Transition frequency
fT 200 MHz VCE=10V, IE=50mA, f=100MHz
Characteristics of built-in transistor
1/3

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