|
|
PDF LDTA115GLT3G Data sheet ( Hoja de datos )
| Número de pieza | LDTA115GLT3G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LDTA115GLT3G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
200
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
LDTA115GLT1G
3
1
2
SOT-23
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115GLT1G
Q4
− 100 3000/Tape & Reel
LDTA115GLT3G
Q4
− 100 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R2
fT
Min. Typ. Max. Unit
Conditions
−50 − − V IC= −50 µA
−50 − − V IC= −1mA
−5 − − V IE= −72 µA
−
−
−0.5
µA VCB= −50V
− − −58 µA VEB= −4V
− − −0.3 V IC= −5mA, IB= −0.25mA
82 − − − IC= −5mA, VCE= −5V
70 100 130 kΩ
−
− 250 − MHz VCE= −10V, IE=5mA, f=100MHz ∗
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTA115GLT3G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LDTA115GLT3G | Bias Resistor Transistor | Leshan Radio Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |