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PDF IRF6710S2TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6710S2TRPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 97124D
IRF6710S2TRPbF
IRF6710S2TR1PbF
l RoHS Compliant Containing No Lead and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.8V
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline
S1 DirectFET ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
25 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
12
10 A
37
100
24 mJ
10 A
20 12
15
ID = 12A
10 ID= 10A
VDS= 20V
VDS= 13V
8
10
TJ = 125°C
5
0
2.0
TJ = 25°C
4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0 4 8 12 16 20 24
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.49mH, RG = 25Ω, IAS = 10A.
1
03/16/10
1 page  
1000
100 TJ = 175°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
40
IRF6710S2TR/TR1PbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100µsec
10msec
1
DC
0.1 TA = 25°C
Tj = 175°C
Single Pulse
0.01
0.0 0.1
1.0
10.0 100.0
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
30 2.5
20 2.0 ID = 1.0A
ID = 1.0mA
ID = 250µA
10 1.5 ID = 25µA
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
700
TJ = 175°C
600
500
400 TJ = 25°C
300
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
100
ID
TOP 1.8A
80 3.8A
BOTTOM 10A
60
40
200
100
0
0
VDS = 10V
380µs PULSE WIDTH
20 40 60 80 100 120 140
ID, Drain-to-Source Current (A)
20
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Typ. Forward Transconductance vs. Drain Current Fig 15. Maximum Avalanche Energy vs. Drain Current
www.irf.com
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