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PDF UPA2731UT1A Data sheet ( Hoja de datos )
| Número de pieza | UPA2731UT1A | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2731UT1A
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed
for power management applications of notebook computers and Li-ion
battery protection circuit.
FEATURES
• Low on-state resistance
RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A)
RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5 V, ID = −22 A)
• Low Ciss: Ciss = 3620 pF TYP.
• Small and surface mount package (8pin HVSON)
PACKAGE DRAWING (Unit: mm)
1
2
3
4
8
7
6
5
6 ±0.2
5.4 ±0.2
0.10 S
ORDERING INFORMATION
PART NUMBER
μ PA2731UT1A-E1-AZ Note
μ PA2731UT1A-E2-AZ Note
PACKAGE
8pin HVSON
8pin HVSON
1
0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
Note Pb-free (This product does not contain Pb in external electrode.)
3.65 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals
are connected.)
0.6 ±0.15
0.7 ±0.15
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
ID(DC)
ID(pulse)
PT1
PT2
m44
m180
1.5
4.6
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to +150
IAS −22
EAS 48
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
V
V
A
A
W
W
°C
°C
A
mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, L = 100 μH, VGS = −20 → 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17640EJ1V0DS00 (1st edition)
Date Published January 2006 NS CP(K)
Printed in Japan
2005
1 page  
10000
SWITCHING CHARACTERISTICS
1000
td(off)
tf
100
tr
10 VDD = −15 V
VGS = −10 V
RG = 10 Ω
1
td(on)
0.1 1 10 100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
- 1000
- 100
- 10
-1
VGS = −10 V
0V
- 0.1
- 0.01
0
Pulsed
- 0.2 - 0.4 - 0.6 - 0.8 - 1 - 1.2
VF(S-D) - Source to Drain Voltage - V
μ PA2731UT1A
DYNAMIC INPUT CHARACTERISTICS
- 12
- 10
VDD = −24 V
- 8 −15 V
−6 V
-6
-4
-2
0
0 50 100
QG - Gate Charge - nC
150
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
- 0.1
di/dt = 50 A/μs
VGS = 0 V
- 1 - 10
IF - Diode Forward Current - A
- 100
Data Sheet G17640EJ1V0DS
5
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