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PDF FDMS3016DC Data sheet ( Hoja de datos )

Número de pieza FDMS3016DC
Descripción N-Channel Dual Cool 56 PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDMS3016DC
N-Channel Dual CoolTM 56 PowerTrench® MOSFET
30 V, 49 A, 6.0 mΩ
July 2013
Features
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A
„ High performance technology for extremely low rDS(on)
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Top Dual CoolTM 56 Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
dv/dt
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 4)
(Note 1a)
2S
1S
Ratings
30
±20
49
78
18
200
72
1.3
60
3.3
-55 to +150
Units
V
V
A
mJ
V/ns
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
5.7
2.1
38
81
16
23
11
°C/W
Device Marking
3016
Device
FDMS3016DC
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.1.5
Package
Dual CoolTM 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com

1 page




FDMS3016DC pdf
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 12A
8
6
4
VDD = 10V
VDD = 15V
VDD = 20V
2
0
0 3 6 9 12 15 18
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
30
10
TJ = 25oC
3000
1000
Ciss
Coss
100
30
0.1
f = 1MHz
VGS = 0V
Crss
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vs Drain
to Source Voltage
80
RθJC = 2.1 oC/W
60
VGS = 10 V
40
TJ = 125oC
Limited by package
20
VGS = 4.5 V
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE(ms)
Figure9. Unclamped Inductive
Switching Capability
100
500
100
100 us
10 1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
SINGLE PULSE
TJ = MAX RATED
0.01 RθJA = 81 oC/W
TA = 25 oC
0.001
0.01
0.1
1
10 ms
100 ms
1s
10 s
DC
10 100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
2000
1000
100
SINGLE PULSE
RθJA = 81 oC/W
TA = 25 oC
10
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.1.5
5
www.fairchildsemi.com

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