|
|
PDF NP90N03VHG Data sheet ( Hoja de datos )
| Número de pieza | NP90N03VHG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP90N03VHG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
NP90N03VHG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0128EJ0100
Rev.1.00
Sep 24, 2010
Description
The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
• Low input capacitance
⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP90N03VHG-E1-AY∗1
NP90N03VHG-E2-AY∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-252, Taping (E1 type)
TO-252, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C) PT1
Total Power Dissipation (TA = 25°C) PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Tstg
IAR
EAR
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
Ratings
30
±20
±90
±360
105
1.2
175
−55 to +175
41
168
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
Page 1 of 6
1 page  
NP90N03VHG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
VGS = 10 V
5 ID = 45 A
4
3
2
1
Pulsed
0
-75 -25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td( on)
td(of f )
10 tr
VDD = 15 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
tf
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10 VGS = 10 V
1
0V
0.1
0.01
0.001
Pulsed
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.01 0.1
Coss
Cr ss
1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10
40
VDD = 24 V
15 V
6V
30
20
V GS
8
6
4
10
0
0
2
V DS
ID = 90 A
0
20 40 60 80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
VGS = 0 V
di/dt = 100 A/μs
10
0.1 1
10
IF - Drain Current - A
100
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP90N03VHG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP90N03VHG | MOS FIELD EFFECT TRANSISTOR | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |