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Número de pieza | BBS3002 | |
Descripción | P-Channel Power MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BBS3002 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number : ENA1357C
BBS3002
P-Channel Power MOSFET
–60V, –100A, 5.8mΩ, TO-263-2L/TO-263
http://onsemi.com
Features
• ON-resistance RDS(on)1=4.4mΩ (typ.)
• Input capacitance Ciss=13200pF (typ.)
• 4V drive
TO-263
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=100μH, IAV=--60A (Fig.1)
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
--60
±20
--100
--400
90
150
--55 to +150
340
--60
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--50A
ID=--50A, VGS=--10V
ID=--50A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--30V, VGS=--10V, ID=--100A
IS=--100A, VGS=0V
min
--60
Ratings
typ
--1.2
54
90
4.4
6.4
13200
1300
950
95
1000
800
820
280
50
55
--1.0
max
--1
±10
--2.6
5.8
9.0
--1.5
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
91113 TKIM TC-00002965/60612 TKIM/12512 TKIM TC-00002684/ No. A1357-1/6
N1208QA MSIM TC-00001708
1 page Package Dimensions
BBS3002-TL-1E
Unit : mm
1: Gate
2: Drain
3: Source
4: Drain
BBS3002
Land Pattern Example
Packing Type: TL
TL
Electrical Connection
2, 4
1
3
No. A1357-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BBS3002.PDF ] |
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