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PDF KMB050N60P Data sheet ( Hoja de datos )

Número de pieza KMB050N60P
Descripción N CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricantes KEC 
Logotipo KEC Logotipo



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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology and
switching mode power supplies.
FEATURES
VDSS= 60V, ID= 50A
Drain-Source ON Resistance :
RDS(ON)=0.022 @VGS = 10V
Qg(typ.) = 32nC
Improved dv/dt capacity, high Ruggedness
Maximum Junction Temperature Range (175
)
KMB050N60P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthJC
RthCS
RthJA
RATING
60
20
50
35
200
493
12
7.0
120
0.8
175
-55 175
1.24
0.5
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
/W
TO-220AB
D
G
S
2006. 4. 24
Revision No : 1
1/6

1 page




KMB050N60P pdf
KMB050N60P
- Gate Charge
Fast
Recovery
ID Diode
0.8 x VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs
Qgd
Qg
Q
- Single Pulsed Avalanche Energy
50V
25
10 V VGS
- Resistive Load Switching
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
tp
0.5 x VDSS
25
10V VGS
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
tf
td(off)
toff
VDS(t)
Time
2006. 4. 24
Revision No : 1
5/6

5 Page










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