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Número de pieza | FDS86540 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDS86540 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FDS86540
N-Channel PowerTrench® MOSFET
60 V, 18 A, 4.5 mΩ
Features
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A
High performance trench technologh for extremely low rDS(on)
High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
May 2012
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1)
(Note 1a)
Ratings
60
±20
18
120
194
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS86540
Device
FDS86540
Package
SO-8
Reel Size
13’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.0005
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDS86540.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDS86540 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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