PDF NTGS3443 Data sheet ( Hoja de datos )

Número de pieza	NTGS3443
Descripción	Power MOSFET ( Transistor )
Fabricantes	ON Semiconductor
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No Preview Available ! NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts P−Channel TSOP−6 Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature TSOP−6 Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant • NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Applications • Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds VDSS VGS RPqdJA ID IDM RPqdJA ID IDM RqJA Pd ID IDM TJ, Tstg TL −20 "12 244 0.5 −2.2 −10 Volts Volts °C/W Watts Amps Amps 128 °C/W 1.0 Watts −3.1 Amps −14 Amps 62.5 2.0 −4.4 −20 −55 to 150 260 °C/W Watts Amps Amps °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, operating to steady state. 2. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), t t 5.0 seconds. http://onsemi.com 4.4 AMPERES 20 VOLTS RDS(on) = 65 mW P−Channel 1256 3 4 MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 654 1 TSOP−6 CASE 318G STYLE 1 443 M G G 123 Drain Drain Gate 443 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NTGS3443T1G TSOP−6 3000 / Tape & Reel (Pb−Free) NVGS3443T1G TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2012 − Rev. 5 1 Publication Order Number: NTGS3443T1/D 1 page NTGS3443, NVGS3443 TYPICAL ELECTRICAL CHARACTERISTICS 20 16 12 8 4 0 0.01 0.10 1.00 10.00 100.00 TIME (sec) Figure 11. Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E−04 Single Pulse 1E−03 1E−02 1E−01 1E+00 SQUARE WAVE PULSE DURATION (sec) 1E+01 1E+02 Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient 1E+03 http://onsemi.com 5 5 Page

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