(PDF) FSB649 Datasheet - NPN Low Saturation Transistor

Número de pieza	FSB649
Descripción	NPN Low Saturation Transistor
Fabricantes	Fairchild Semiconductor
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No Preview Available ! FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter FSB649 VCEO Collector-Emitter Voltage 25 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 35 5 IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 3 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units V V V A °C NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient Max FSB649 500 250 Units mW °C/W © 1999 Fairchild Semiconductor Corporation fsb649.lwpPrNC revA 1 page

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