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PDF LDTA114ELT1G Data sheet ( Hoja de datos )
| Número de pieza | LDTA114ELT1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
Limits
− 50
−40 to +10
− 50
− 100
200
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114EWT1G
P3
10 10 3000/Tape & Reel
LDTA114EWT1G
P3
10 10 10000/Tape & Reel
LDTA114ELT1G
3
1
2
SOT–23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
−
−3
Output voltage
VO(on)
−
Input current
II −
Output current
IO(off)
−
DC current gain
GI 30
Input resistance
R1 7
Resistance ratio
R2/R1 0.8
Transition frequency
fT ∗ −
∗ Characteristics of built-in transistor
Typ. Max. Unit
− −0.5
V
−−
− −0.3 V
− −0.88 mA
− −0.5 µA
−−−
10 13 kΩ
1 1.2 −
250 − MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−10mA
IO/II=−10mA/−0.5mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−5mA
−
−
VCE=−10V, IE=5mA, f=100MHz
1/3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTA114ELT1G.PDF ] | |
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