|
|
Número de pieza | LDTC124TLT3G | |
Descripción | Bias Resistor Transistors | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LDTC124TLT3G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
−55 to +150
Unit
V
V
V
mA
mW
C
C
LDTC124TLT1G
3
1
2
SOT-23
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC124TLT1G
H4
22
3000/Tape & Reel
LDTC124TLT3G
H4
22
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 5 − − V IE=50µA
Collector cutoff current
ICBO − − 0.5 µA VCB=50V
Emitter cutoff current
IEBO − − 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE(sat) −
− 0.3 V IC/IB=5mA/0.5mA
DC current transfer ratio
hFE 100 250 600 − VCE=5V, IC=1mA
Input resistance
R1 15.4 22 28.6 kΩ
−
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ − 250 − MHZ VCE=10V, IE=−5mA, f=100MHZ
1/3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet LDTC124TLT3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
LDTC124TLT3G | Bias Resistor Transistors | Leshan Radio Company |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |