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PDF LDTC114WLT3G Data sheet ( Hoja de datos )

Número de pieza LDTC114WLT3G
Descripción Bias Resistor Transistors
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LDTC114WLT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VI
IO
I C(Max.)
Pc
Tj
Tstg
Limits
50
10 to +30
100
100
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
LDTC114WLT1G
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC114WLT1G
M4
10
4.7 3000/Tape & Reel
LDTC114WLT3G
M4
10
4.7 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
24
7
0.37
Typ.
0.1
10
0.47
250
Max.
0.8
0.3
0.88
0.5
13
0.57
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
IO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
IO=10mA, VO=5V
VCE=10V, IE= 5mA, f=100MHz
1/3

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