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PDF STD11NM65N Data sheet ( Hoja de datos )

Número de pieza STD11NM65N
Descripción N-channel MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STD11NM65N Hoja de datos, Descripción, Manual

STD11NM65N, STF11NM65N,
STFI11NM65N, STP11NM65N
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET
in DPAK, TO-220FP, I²PAKFP and TO-220 packages
Datasheet - production data
TAB
3
1
DPAK
1
2
3
I²PAKFP
3
2
1
TO-220FP
TAB
3
2
1
TO-220
Features
Order codes
VDSS @
TJmax
RDS(on)
max
ID
STD11NM65N
STF11NM65N
STFI11NM65N
STP11NM65N
710 V < 0.455 Ω 11 A
100% avalanche tested
Low input capacitance and gate charge
low gate input resistance
Figure 1. Internal schematic diagram
' Ć7$%
Applications
Switching applications
Description
* 
6 
$0Y
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Order codes
STD11NM65N
STF11NM65N
STFI11NM65N
STP11NM65N
Table 1. Device summary
Marking
Packages
11NM65N
DPAK
TO-220FP
I²PAKFP
TO-220
Packaging
Tape and reel
Tube
July 2013
This is information on a product in full production.
Doc ID 13476 Rev 4
1/21
www.st.com

1 page




STD11NM65N pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
Electrical characteristics
Symbol
Parameter
Table 6. Switching times
Test conditions
td (on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 325 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20 and
Figure 23)
Min. Typ. Max. Unit
- 15.5 - ns
- 10.8 - ns
- 11 - ns
- 47 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 11 A, VGS = 0
-
-
11 A
44 A
1.6 V
trr Reverse recovery time
- 418
Qrr Reverse recovery charge
ISD = 11 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 23)
-
4.4
IRRM Reverse recovery current
- 21
ns
μC
A
trr Reverse recovery time
- 530
ISD = 11 A, di/dt = 100 A/μs
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 23)
- 5.6
- 21
ns
μC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Doc ID 13476 Rev 4
5/21
21

5 Page





STD11NM65N arduino
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
Package mechanical data
Figure 24. DPAK (TO-252) drawing
Figure 25. DPAK footprint(a)
6.7 1.8 3 1.6
2.3
6.7
2.3
1.6
0068772_I
AM08850v1
a. All dimension are in millimeters
Doc ID 13476 Rev 4
11/21
21

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