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Número de pieza | IRF8707GPbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRF8707GPbF
Applications
HEXFET® Power MOSFET
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
VDSS
RDS(on) max
Qg
:30V 11.9m @VGS = 10V 6.2nC
Systems
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
l Lead-Free
l Halogen-Free
Description
The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
30
± 20
V
11
9.1 A
88
2.5
1.6
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/10/09
1 page 12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
IRF8707GPbF
2.5
2.2
1.9 ID = 250µA
1.6 ID = 25µA
1.3
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.01
0.001
1E-006
PDM
R 1R 1
R 2R 2
R 3R 3
R 4R 4
Ri (°C/W) τi (sec)
t1
τJ τJ
τ1 τ1
Ci= τi/Ri
τ2 τ2
τ3 τ3
τ4 τ4
τAτA
2.2284
7.0956
25.4895
0.000169
0.013738
0.68725
Notes:
1. Duty factor D = t1 / t 2
t2
Ci= τi/Ri
15.1981 25.8
2. Peak T J = P DM x Z thJA + TA
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRF8707GPbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF8707GPbF | Power MOSFET ( Transistor ) | International Rectifier |
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