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Número de pieza | BAV23S | |
Descripción | General purpose double diode | |
Fabricantes | Philips Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAV23S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV23S
General purpose double diode
Product specification
Supersedes data of 1998 Jan 08
1999 May 05
1 page Philips Semiconductors
General purpose double diode
Product specification
BAV23S
handbook1, 0ha2lfpage
IR
(µA)
10
(1)
1
(2)
MBG381
10 1
10 2
0
100 Tj (oC) 200
(1) VR = 200 V; maximum values.
(2) VR = 200 V; typical values.
Fig.5 Reverse current as a function of junction
temperature.
1.0
handbook, halfpage
Cd
(pF)
0.8
MBG447
0.6
0.4
0.2
0 2 4 6 VR (V) 8
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
MGA881
VR
tr
10%
tp
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 3 mA.
1999 May 05
Fig.7 Reverse recovery voltage test circuit and waveforms.
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BAV23S.PDF ] |
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