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PDF LDTB114EWT1G Data sheet ( Hoja de datos )

Número de pieza LDTB114EWT1G
Descripción Bias Resistor Transistor
Fabricantes LRC 
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No Preview Available ! LDTB114EWT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
VCC
VIN
IC
50
40 to +10
500
V
V
mA
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
200
150
55 to +150
mW
C
C
LDTB114EWT1G
S-LDTB114EWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114EWT1G
S-LDTB114EWT1G
LDTB114EWT3G
S-LDTB114EWT3G
Q6
Q6
10 10 3000/Tape & Reel
10 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
Output voltage
Input current
Output current
DC current gain
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
3
56
Input resistance
R1 7
Resistance ratio
Transition frequency
Characteristics of built-in transistor
R2/R1
fT
0.8
Typ.
0.1
10
1
200
Max.
0.5
0.3
0.88
0.5
13
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 10mA
IO/II= 50mA/2.5mA
VI= 5V
VCC= 50V, VI=0V
VO= 5V, IO= 50mA
VCE= 10V, IE=50mA, f=100MHz
Rev.O 1/3

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