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PDF LDTD123TWT1G Data sheet ( Hoja de datos )

Número de pieza LDTD123TWT1G
Descripción Bias Resistor Transistor
Fabricantes LRC 
Logotipo LRC Logotipo



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No Preview Available ! LDTD123TWT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
50
40
5
500
200
150
-55 to +150
V
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD123TWT1G
S-LDTD123TWT1G
E1
2.2 _ 3000/Tape & Reel
LDTD123TWT3G
S-LDTD123TWT3G
E1
2.2 _ 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
LDTD123TWT1G
S-LDTD123TWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
Rev.O 1/3

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