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PDF IRF7807D2PbF Data sheet ( Hoja de datos )

Número de pieza IRF7807D2PbF
Descripción MOSFET / SCHOTTKY DIODE
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD- 95436A
IRF7807D2PbF
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free
FETKY™ MOSFET / SCHOTTKY DIODE
SO-8
A/S 1
8 K/D
A/S 2
7 K/D
A/S 3
6 K/D
G4
5 K/D
D
Top View
Description
The FETKYfamily of Co-Pack HEXFET® MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Device Features (Max Values)
VDS
RDS(on)
Qg
QSW
Qoss
IRF7807D2
30V
25m
14nC
5.2nC
21.6nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent„
70°C
Junction & Storage Temperature Range
Symbol
V
DS
VGS
ID
IDM
PD
IF (AV)
TJ, TSTG
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Units
V
A
W
A
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
www.irf.com
RθJA
Max.
50
Units
°C/W
1
10/7/04

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IRF7807D2PbF pdf
IRF7807D2PbF
0.05 0.024
0.04 0.022
VGS = 4.5V
0.03 0.020
0.02 ID = 7.0A 0.018
VGS = 10V
0.01
2.0
4.0 6.0 8.0
VGS, Gate -to -Source Voltage (V)
10.0
Fig 9. On-Resistance Vs. Gate Voltage
0.016
0
20 40 60
I D , Drain Current (A)
80
Fig 10. On-Resistance Vs. Drain Current
100
D = 0.50
10 0.20
0.10
0.05
0.02
0.01
1
0.1
0.001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1 1 10
t1, Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET)
www.irf.com
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