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Número de pieza LDTA143ZET3G
Descripción Bias Resistor Transistor
Fabricantes LRC 
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA143ZWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
3
1
2
SC-70
1
BASE
R1
R2
3
COLLECTOR
Parameter
Symbol
Limits
Unit
2
EMITTER
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VI
IO
IC(Max.)
Pd
Tj
Tstg
50
30 to +5
100
100
200
150
55 to +150
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA143ZET1G
6K
4.7 47 3000/Tape & Reel
LDTA143ZET3G
6K
4.7 47 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
1.3
80
3.29
8
Typ.
0.1
4.7
10
250
Max.
0.5
0.3
1.8
0.5
6.11
12
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−5mA
IO/II=−5mA/0.25mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−10mA
VCE=−10V, IE=5mA, f=100MHz
1/3

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