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Número de pieza LDTA115EWT3G
Descripción Bias Resistor Transistor
Fabricantes LRC 
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No Preview Available ! LDTA115EWT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Parameter
Output current
Symbol
VCC
VI
IO
IC(Max.)
Limits
50
40 to +10
20
100
Power dissipation
PD 150
Junction temperature
Tj 150
Storage temperature
Tstg
55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115EWT1G
6N
100 100 3000/Tape & Reel
LDTA115EWT3G
6N
100 100 10000/Tape & Reel
Unit
V
V
mA
mW
°C
°C
LDTA115EWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
82
70
0.8
Typ.
0.1
100
1
250
Max.
0.5
0.3
0.15
0.5
130
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −1mA
IO= −5mA, II= −0.25mA
VI= −5V
VCC= −50V, VI=0V
IO= −5mA, VO= −5V
VCE= −10V, IE=5mA, f=100MHz
1/3

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