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PDF LDTA123EWT1G Data sheet ( Hoja de datos )
| Número de pieza | LDTA123EWT1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Symbol
VCC
Input voltage
VIN
Output current
IO
IC(Max.)
Power dissipation
PD
Junction temperature
Tj
Storage temperature
Tstg
Limits
−50
−12 to +10
−100
−100
200
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
LDTA123EWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA123EWT1G
6H
2.2 2.2 3000/Tape & Reel
LDTA123EWT3G
6H
2.2 2.2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
−3
−
−
−
20
1.54
0.8
−
Typ.
−
−
−0.1
−
−
−
2.2
1
250
Max.
−0.5
−
−0.3
−3.8
−0.5
−
2.86
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−20mA
IO/II=−10mA/−0.5mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−20mA
−
−
VCE=−10V, IE=5mA, f=100MHz
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTA123EWT1G.PDF ] | |
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