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PDF LDTC123EWT3G Data sheet ( Hoja de datos )

Número de pieza LDTC123EWT3G
Descripción Bias Resistor Transistor
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LDTC123EWT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
Pd
Tj
Tstg
Limits
50
10 to +12
100
100
150
150
55 to +150
LDTC123EWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
Unit
V
V
mA
mW
°C
°C
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC123EWT1G
N1
2.2 2.2 3000/Tape & Reel
LDTC123EWT3G N1
2.2 2.2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
3
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI 20
Input resistance
R1 1.54
Resistance ratio
Transition frequency
R2/R1
fT
0.8
Characteristics of built-in transistor
Typ.
0.1
2.2
1
250
Max.
0.5
0.3
3.8
0.5
2.86
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=20mA
VCE=10V, IE= −5mA, f=100MHz
1/3

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