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PDF LDTDG12GPT3G Data sheet ( Hoja de datos )

Número de pieza LDTDG12GPT3G
Descripción Bias Resistor Transistor
Fabricantes LRC 
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No Preview Available ! LDTDG12GPT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTDG12GPT1G
zApplications
Driver
zFeatures
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A)
2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
We declare that the material of product compliance with
RoHS requirements.
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
60±10
60±10
5
1
2 1
0.5
2 2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
1 Pw10ms, Duty cycle1/2
2 When mounted on a 40×40×0.7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
3
1
2
SC-89
1
BASE
R1
R
3
COLLECTOR
R=10k
2
EMITTER
LDTDG12GPT1G Q7
1 22 3000/Tape & Reel
LDTDG12GPT3G Q7
1 22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
Min.
50
50
5
300
300
7
Transition frequency
fT ∗ −
Characteristics of built-in transistor
Typ.
10
80
Max.
70
70
0.5
580
0.4
13
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=720µA
VCB=40V
VEB=4V
IC/IB=500mA/5mA
VCE=2V, IC=500mA
VCE=5V, IE=−0.1A, f=30MHz
1/3

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