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PDF LDTB113ZET1G Data sheet ( Hoja de datos )
| Número de pieza | LDTB113ZET1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB113ZET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IC
PD
Tj
Tstg
Limits
−50
−10 to +5
−500
200
150
−55 to +150
Unit
V
V
mA
mW
C
C
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ZET1G
K8
1 10 3000/Tape & Reel
LDTB113ZET3G
K8
1 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
−
−3
Output voltage
VO(on)
−
Input current
II −
Output current
IO(off)
−
DC current gain
GI 56
Input resistance
R1 0.7
Resistance ratio
R2/R1
8
Transition frequency
fT
∗ Transition frequency of the device
−
Typ.
−
−
−
−
−
−
1
10
200
Max.
−0.3
−
−0.3
−7.2
−0.5
−
1.3
12
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI=0V
VO= − 5V, IO= −50mA
−
−
VCE= −10V, IE=50mA, f=100MHz ∗
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTB113ZET1G.PDF ] | |
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