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PDF LDTB143EET3G Data sheet ( Hoja de datos )
| Número de pieza | LDTB143EET3G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB143EET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
VCC
VIN
IC
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
Limits
−50
−30 to +10
−500
200
150
−55 to +150
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
Unit EMITTER
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB143EET1G
K6
4.7 4.7 3000/Tape & Reel
LDTB143EET3G
K9
4.7 4.7 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in tranasistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
−3
−
−
−
47
3.29
0.8
−
Typ.
−
−
−0.1
−
−
−
4.7
1
200
Max.
−0.5
−
−0.3
−1.8
−0.5
−
6.11
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI=0V
VO= −5V, IO= −50mA
−
−
VCE= −10V, IE=50mA, f=100MHz
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTB143EET3G.PDF ] | |
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