DataSheet.es    


PDF LDTB114TKT3G Data sheet ( Hoja de datos )

Número de pieza LDTB114TKT3G
Descripción Bias Resistor Transistor
Fabricantes LRC 
Logotipo LRC Logotipo



Hay una vista previa y un enlace de descarga de LDTB114TKT3G (archivo pdf) en la parte inferior de esta página.


Total 3 Páginas

No Preview Available ! LDTB114TKT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
40
5
500
200
150
55 to +150
Unit
V
V
V
mA
mW
C
C
LDTB114TKT1G
3
1
2
SC-89
1
BASE R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114TKT1G
K3
10
3000/Tape & Reel
LDTB114TKT3G
K3
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff curren
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
40
5
100
7
Typ.
250
10
200
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −50V
VEB= −4V
IC/IB= −50mA/2.5mA
IC= −50mA , VCE= −5V
VCE= −10V , IE=50mA , f=100MHz
1/3

1 page





PáginasTotal 3 Páginas
PDF Descargar[ Datasheet LDTB114TKT3G.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
LDTB114TKT3GBias Resistor TransistorLRC
LRC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar