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PDF RJK4006DPD Data sheet ( Hoja de datos )
| Número de pieza | RJK4006DPD | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK4006DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
2, 4
12 3
1
3
REJ03G1547-0100
Rev.1.00
Dec 19, 2008
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
Ratings
400
±30
8
24
8
24
8
3.7
65
1.92
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1547-0100 Rev.1.00 Dec 19, 2008
Page 1 of 6
1 page  
RJK4006DPD
Normalized Transient Thermal Impedance vs. Pulse Width
10
TC = 25°C
1 D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
1 Shot Pulse
0.01
0.001
10 µ
100 µ
θch–c(t) = γS (t) • θch–c
θch–c = 1.92°C/W, TC = 25°C
PDM
D
=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1547-0100 Rev.1.00 Dec 19, 2008
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK4006DPD.PDF ] | |
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