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PDF RJK0226DNS Data sheet ( Hoja de datos )

Número de pieza RJK0226DNS
Descripción Silicon N Channel Power MOS FET
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! RJK0226DNS Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJK0226DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0260EJ0110
Rev.1.10
Mar 03, 2011
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.3 mtyp. (at VGS = 8 V)
Pb-free
Halogen-free
Outline
Package name: 8pin HVSON(3333)
5 6 78
4 321
4
G
5 678
D DDD
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
25
±12
40
160
40
14.7
27
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 1 of 6

1 page




RJK0226DNS pdf
RJK0226DNS
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Vin
10 V
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03 00.0.0211shot pulse
0.01
10 μ 100 μ
θch c(t) = γs (t) • θch c
θch c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L IAP2
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin VDS
8 V = 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 5 of 6

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