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PDF IRFR4615PBF Data sheet ( Hoja de datos )

Número de pieza IRFR4615PBF
Descripción Power MOSFETs
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
IRFR4615PbF
IRFU4615PbF
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
34m:
max. 42m:
S ID
33A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
DD
S
G
DPak
IRFR4615PbF
S
D
G
IPAK
IRFU4615PbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFR4615PbF
IRFR4615TRLPbF
IRFU4615PbF
Package Type
D-PAK
I-PAK
Standard Pack
Form
Tube/Bulk
Tape and Reel Left
Tube/Bulk
Quantity
75
3000
75
Orderable Part Number
IRFR4615PbF
IRFR4615TRLPbF
IRFU4615PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through ˆ are on page 11
Max.
33
24
140
144
0.96
± 20
38
-55 to + 175
300
109
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2013 International Rectifier
May 16, 2013

1 page




IRFR4615PBF pdf
IRFR/U4615PbF
10
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.02324
0.26212
τi (sec)
0.000008
0.000106
τ4τ4 0.50102 0.001115
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτi/Ri/iRi
0.25880 0.005407
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
10 0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
120
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle
1. Avalanche failures assumption:
100 ID = 21A
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
80
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
60
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
40 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
20 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5 www.irf.com © 2013 International Rectifier
May 16, 2013

5 Page





IRFR4615PBF arduino
IRFR/U4615PbF
Qualification Information
Qualification level
Moisture Sensitivity Level
RoHS Compliant
Industrial
(per JEDEC JESD47F†† guidelines)
D-PAK
I-PAK
MSL1
(per JEDEC J-STD-020D††)
Not applicable
Yes
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 21A, di/dt 549A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
ˆ Rθ is measured at TJ approximately 90°C
Revision History
Date
5/16/2013
Comments
ÃUpdated datasheet to new IR corporate formatting template
ÃUpdated Orderable part number from "IRFR4615TRPbF" to "IRFR4615TRLPbF", on page 1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2013 International Rectifier
May 16, 2013

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