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PDF LDTA123EET1G Data sheet ( Hoja de datos )

Número de pieza LDTA123EET1G
Descripción Bias Resistor Transistor
Fabricantes LRC 
Logotipo LRC Logotipo



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No Preview Available ! LDTA123EET1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors LDTA114EET1G Series
PNP Silicon Surface Mount Transistors S-LDTA114EET1G Series
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Rating
VCBO
VCEO
IC
50 Vdc
50 Vdc
100 mAdc
Symbol Value Unit
Total Device Dissipation, FR−4 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
PD
RqJA
200 mW
1.6 mW/°C
600 °C/W
Total Device Dissipation, FR−4 Board
(Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
PD
RqJA
300 mW
2.4 mW/°C
400 °C/W
Junction and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
SC-89
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Rev.B 1/6

1 page




LDTA123EET1G pdf
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series,S-LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EET1G
100
Vo=0.2V
10
1
0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (mA)
-55℃
-25℃
25℃
75℃
125℃
Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT
Rev.B 5/6

5 Page










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