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PDF IRF7815PbF Data sheet ( Hoja de datos )

Número de pieza IRF7815PbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 10V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
PD - 96284
IRF7815PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:150V 43m @VGS = 10V 25nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Max.
150
± 20
5.1
4.1
41
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
www.irf.com
1
12/01/09

1 page




IRF7815PbF pdf
IRF7815PbF
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
6.0
5.0
4.0
ID = 100uA
ID = 150uA
3.0 ID = 250uA
ID = 1.0mA
ID = 1.0A
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
0.0001
1E-006
1E-005
τJ τJ
τ1 τ1
R 1R 1
Ci= τi/Ri
Ci= τi/Ri
R 2R 2
τ2 τ2
SINGLE PULSE
( THERMAL RESPONSE )
R3R3 R4R4 Ri (°C/W) τi (sec)
τ3 τ3
τ4 τ4
τAτA
2.8482
16.4171
20.8292
0.012383
36.75014
5.677801
9.8220 0.525832
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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