|
|
PDF LBC847CDW1T1G Data sheet ( Hoja de datos )
| Número de pieza | LBC847CDW1T1G | |
| Descripción | Dual General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LBC847CDW1T1G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with
RoHS requirements.
6 54
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
Q2
12
Q1
3
See Table
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
V CEO
V CBO
V EBO
IC
BC846
65
80
6.0
100
BC847 BC848
45 30
50 30
6.0 5.0
100 100
Unit
V
V
V
mAdc
6
5
4
1
2
3
SOT-363 /SC-88
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
LBC846BDW1T1G
LBC846BDW1T3G
LBC847BDW1T1G
LBC847BDW1T3G
LBC847CDW1T1G
LBC847CDW1T3G
LBC848BDW1T1G
LBC848BDW1T3G
LBC848CDW1T1G
LBC848CDW1T3G
Marking
1B
1B
1F
1F
1G
1G
1K
1K
1L
1L
Symbol
PD
R θJA
T J , T stg
Max Unit
380 mW
250 mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
Shipping
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LBC846BDW1T1G, LBC847BDW1T1G, LBC847CDW1T1G, LBC848BDW1T1G, LBC848CDW1T1G
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
0
SINGLE PULSE
1.0
P (pk)
t1
t2
DUTY CYCLE, D = t 1 /t 2
Z θJA (t) = r(t) R θJA
R θJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T J(pk) – T C = P (pk) R θJC (t)
10
100
1.0K
10K
t, TIME (ms)
Figure 11. Thermal Response
100K
1.0M
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0 -10
-30 -45 -65 -100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
The safe operating area curves indicate I C –V CE limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T J(pk) = 150°C; T C or
T A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T J(pk) < 150°C. T J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LBC847CDW1T1G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LBC847CDW1T1 | (LBC846xDW1T1 - LBC848xDW1T1) Dual General Purpose Transistors NPN Duals | Leshan Radio Company |
| LBC847CDW1T1G | Dual General Purpose Transistors | Leshan Radio Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |