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PDF 2N6719 Data sheet ( Hoja de datos )
| Número de pieza | 2N6719 | |
| Descripción | NPN SILICON PLANAR TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N6719
TO-237
Plastic Package
Designed for Applilcation as a Video Output to Drive Color CRT
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Power Dissipation @ Tc=25ºC
Operating and Storage Junction
Temperature Range
VCBO
VCEO
VEBO
IC
PD
PD
Tj, Tstg
300
300
7.0
0.5
1.0
2.0
-65 to +150
THERMAL RESISTANCE
Junction to ambient
Junction to case
Rth(j-a)
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
125
62.5
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter ( Sat) Voltage
Base Emitter (on) Voltage
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
IC=1mA, IB=0
IC=100µA, IE=0
IE=1mA, IC =0
VCB=200V, IE=0
VEB=6V, IC=0
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=30mA,VCE=10V
VCE(sat) IC=30mA,IB=3mA
VBE (sat) IC=20mA,IB=2mA
VBE (on) IC =30mA, VCE=10V
300
300
7
25
40
40
TYP
DYNAMICS CHARACTERISTICS
Current Gain Bandwidth Product
Collector Base Capacitance
Small Signal Current Gain
Continental Device India Limited
fT
Ccb
l hfe l
VCE=10V, IC=15mA,
VCB=20V, IC=0, f=1MHz
IC=15mA, VCE=100V,
f=20MHz
Data Sheet
30
2.5
UNIT
V
V
V
A
W
W
ºC
ºC/W
ºC/W
MAX
100
100
UNIT
V
V
V
nΑ
nΑ
200
0.75
1.0
0.85
V
V
V
300 MHz
3.5 pF
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6719.PDF ] | |
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