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PDF IRF7834PbF Data sheet ( Hoja de datos )

Número de pieza IRF7834PbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 95292
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
IRF7834PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:30V 4.5m @VGS = 10V 29nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Max.
30
± 20
19
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 10
www.irf.com
1
9/21/04

1 page




IRF7834PbF pdf
IRF7834PbF
20 2.2
16
1.8
12
ID = 250µA
8
1.4
4
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01 ( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
1.1659
9.9439
τi (sec)
0.000184
0.153919
τ4τ4 25.520 1.7486
13.380 49
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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