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Número de pieza | RJK0451DPB | |
Descripción | Silicon N Channel Power MOS FET | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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No Preview Available ! RJK0451DPB
40V, 35A, 7.0m max.
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0073EJ0200
Rev.2.00
Apr 09, 2013
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 5.5 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
5
D
4 1, 2, 3 Source
G 4 Gate
5 Drain
SSS
123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-C
Tch
Tstg
Ratings
40
20
35
140
35
17.5
24.5
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(VGS(off)) which characteristics has been improved.
R07DS0073EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
1 page RJK0451DPB
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.78°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAS =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr td(off)
tf
R07DS0073EJ0200 Rev.2.00
Apr 09, 2013
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJK0451DPB.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJK0451DPB | Silicon N Channel Power MOS FET | Renesas Technology |
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