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PDF DMG6601LVT Data sheet ( Hoja de datos )

Número de pieza DMG6601LVT
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMG6601LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
RDS(ON) max
Package
Q1 30V 55m@ VGS = 10V TSOT26
65m@ VGS = 4.5V TSOT26
Q2 -30V 110m@ VGS = -10V TSOT26
142m@ VGS = -4.5V TSOT26
ID max
TA = +25°C
3.8A
3.6A
-2.5A
-2.1A
Features
Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
TSOT26
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.008 grams (approximate)
D1
Q1
D2
Q2
G1 1
6 D1
S2 2
G2 3
5 S1
4 D2
G1
G2
Top View
Top View
S1
N-Channel
S2
P-Channel
Device Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG6601LVT-7
Case
TSOT26
Packaging
3K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
66G
66G = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 9
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
August 2013
© Diodes Incorporated

1 page




DMG6601LVT pdf
20
18
16
14
12
10
8
6
4
2
0
0
10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
8
VDS = 15V
ID = 3.1A
6
1,000
DMG6601LVT
Ciss
100
f = 1MHz
Coss
Crss
10
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
4
2
00 2 4 6 8 10 12 14
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge
1 D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
RJA(t) = r(t) * RJA
RJA = 143°C/W
Duty Cycle, D = t1/ t2
0.01 0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
10
100
1,000
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
5 of 9
www.diodes.com
August 2013
© Diodes Incorporated

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